Welcome to Suzhou GAO Semiconductor Co., Ltd.
A Pioneer in Gallium Oxide Industrialization
—Suzhou Gao Semiconductor Co., Ltd.
Suzhou GAO Semiconductor Co., Ltd. is a high-tech enterprise specializing in ultra-wide bandgap semiconductor materials, with a particular focus on gallium oxide (Ga₂O₃). Dedicated to overcoming key technological challenges in the Ga₂O₃ industry, the company integrates materials R&D, device design, and application development to deliver high-performance Ga₂O₃ materials and solutions that support innovation in next-generation power electronics. We have achieved significant breakthroughs in the growth of high-resistivity semi-insulating and conductive Ga₂O₃ single crystals using the EFG method. We are capable of reliably supplying 2-inch and 4-inch substrates and continues to make steady progress toward the mass production of 6-inch substrates. Our products have already been validated and adopted by leading power device manufacturers. In epitaxial growth, we have established strong capabilities in both high-mobility homoepitaxy and heteroepitaxy. Key material performance indicators, including defect density and background carrier concentration, have reached industry-leading levels.
The company's technology originates from the founding team's more than ten years of in-depth research in the gallium oxide field, supported by more than ten research funds, including the National Natural Science Foundation of China, the National Key Research and Development Program of China, the Ministry of Education's National Defense Pre-research Special Fund, and key research and development projects of Beijing and Guangzhou.
Years of industry experience
Invention Patent
Core technologies
Development
Professor Weihua Tang
Founder & Chairman
Focusing on gallium oxide research since 2011,
a pioneer in gallium oxide research and industrialization in China.
Professor Tang Weihua holds a PhD from the Institute of Physics, Chinese Academy of Sciences, and is a professor/doctoral supervisor at Nanjing University of Posts and Telecommunications. He is a recipient of the National "Hundred, Thousand, Ten Thousand Talents Project," enjoys special government allowances from the State Council, and was selected for the CAS "Hundred Talents Program." He has won first and second prizes of the Beijing Science and Technology Award. He previously served as a professor/doctoral supervisor at Beijing University of Posts and Telecommunications and a researcher/doctoral supervisor at the Institute of Physics, Chinese Academy of Sciences. He has conducted collaborative research at international institutions such as the University of Hong Kong, the Rare Earth Metallurgy Spectroscopy Laboratory of the French National Centre for Research in Science, the National Institute of Technology and Standards (NIST) of the United States, and Tulane University. He has published over 350 SCI-indexed papers, with over 15,000 citations and an H-index of 62. From 2021 to 2023, he was ranked as a Highly Cited Researcher by ELSEVIER for three consecutive years, entered the 2023 Global Top Materials Scientists Ranking, and was included in the 1960-2023 Lifetime Scientific Impact Ranking.
Professor Tang Weihua has focused on gallium oxide research since 2011 and is a pioneer in gallium oxide research and industrialization in China. He has led more than 20 national and provincial-level research projects related to gallium oxide, with a total funding of over 50 million yuan. His gallium oxide-related SCI papers and citations rank first internationally, and he received his first provincial-level science and technology award related to gallium oxide research (Second Prize of Beijing Natural Science Award). He has mastered 2-4 inch gallium oxide single crystal growth technology, pioneered the fabrication of 2-4 inch gallium oxide epitaxial wafers, and mastered the design and fabrication technology of gallium oxide solar-blind ultraviolet discrete and array sensor chips. He holds more than 20 invention patents related to gallium oxide crystals, epitaxy, and devices.
Our Service
Gallium oxide single crystal furnace
2-inch | 4-inch
Design and customization of 2/4-inch crystal growth furnaces
Crystal growth process verification available
Gallium oxide single crystal
Substrate | Seed crystal
Various sizes of single-crystal substrates
Seed crystals of different crystal phases
Grinding, cutting, polishing and other related processes
Gallium oxide epitaxial wafer
Homoephasis | Heteroephasis
Homoephasis on thin film
Thin film epitaxial growth on other substrates
Customized and modified MOCVD
Certification
Workshop
Third Prize for Non-ferrous Metals
Third Prize in the China Innovation and Entrepreneurship Competition
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Company Profile
Company Profile
Address: Room 1001, Building 30 North Zone, Nanopolis Suzhou, No. 99 Jinjihu Avenue, Suzhou Industrial Park, Suzhou City, Jiangsu, P. R. China
Tel: +86 0512-65003200
E-mail: sales@gaosemi.cn
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