Welcome to Suzhou GAO Semiconductor Co., Ltd.
GAO Semiconductor completes Series A financing
Release time:
2023-06-22
This round of financing will further accelerate the development of "Galan and Semiconductor" in key areas such as technological breakthroughs, product development, capacity expansion, talent acquisition, and application deployment.
Founded in 2021, GAO Semiconductor is a manufacturer of gallium oxide (GAO) substrates and epitaxy for ultra-wide bandgap semiconductor materials. Its main products include GAO single-crystal substrates and epitaxial wafers, single-crystal and epitaxial growth equipment, high-sensitivity solar-blind ultraviolet detectors, and high-power power electronic devices. Since its inception, GAO Semiconductor has applied for over 20 domestic invention patents and possesses four core technologies: GAO single-crystal growth technology, GAO substrate processing technology, GAO thin-film epitaxy technology, and GAO device technology.
This investment was led by Kaisheng Capital, with participation from Haitong Securities, Zhengwei Capital, and Yingtian Investment. Chuangchenghui Science and Technology Innovation Platform served as the financial advisor. This round of financing will further accelerate GAO Semiconductor's development in key areas such as technological breakthroughs, product development, capacity expansion, talent acquisition, and application deployment, thereby accelerating the localization and upgrading of large-size GAO substrates and epitaxy, and making due contributions to the independent control and comprehensive development of my country's ultra-wide bandgap semiconductor material industry chain.
Related News
On January 15, 2025, Suzhou GAO Semiconductor Co., Ltd. held a grand opening ceremony in Xinshengli, Suzhou Industrial Park, to celebrate the official completion and commencement of production, the signing of cooperation projects, and the launch of new products such as a 6-inch gallium oxide substrate.
2025-01-17
GAO Semiconductors Release Parameters For 4-Inch Single-Crystal Substrate For The First Time.
GAO Semiconductors released parameters of a 4-inch (100) plane gallium oxide single crystal substrate for the first time at the "4th Cross-Strait Gallium Oxide and Related Materials and Devices Symposium".
2024-10-15
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Address: Room 1001, Building 30 North Zone, Nanopolis Suzhou, No. 99 Jinjihu Avenue, Suzhou Industrial Park, Suzhou City, Jiangsu, P. R. China
Tel: +86 0512-65003200
E-mail: sales@gaosemi.cn
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