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GAO Semiconductors Release Parameters For 4-Inch Single-Crystal Substrate For The First Time.
Release time:
2024-10-15
GAO Semiconductors released parameters of a 4-inch (100) plane gallium oxide single crystal substrate for the first time at the "4th Cross-Strait Gallium Oxide and Related Materials and Devices Symposium".
From October 12th to 15th, 2023, the "4th Cross-Strait Symposium on Gallium Oxide and Related Materials and Devices," themed "Cultivating Character, Building Gallium, Creating the Future," was successfully held in Jinan. The conference brought together over 500 representatives from across the Taiwan Strait and Hong Kong, representing experts, scholars, innovative enterprises, and investment institutions in the field of gallium oxide materials and devices. Through oral presentations, poster displays, and panel discussions, participants exchanged the latest advancements in the gallium oxide field and explored the opportunities, challenges, and development directions of gallium oxide semiconductors.
The symposium featured a comprehensive display of gallium oxide samples, including 2-inch (100), (001), and (-201) single-crystal substrates with various crystal planes, UID and Sn-doped substrates, as well as 4-inch 100-plane single-crystal substrates. These samples were presented in a systematic manner for attendees to view and experience. The booth attracted a large number of conference delegates seeking consultation, exchange, and cooperation opportunities, showcasing the leading advantages of gallium oxide and its semiconductor products. The company and its products garnered significant attention from experts, scholars, and professionals across the relevant industry chain. At the opening ceremony banquet, GAO Semiconductor officially announced that it has released the parameters of a 4-inch (100-plane) gallium oxide single crystal substrate for the first time in China and has achieved small-batch production. The company also announced that it now fully possesses the capability to provide "multi-specification gallium oxide single crystal products; multi-specification gallium oxide epitaxial products; multi-purpose gallium oxide dedicated equipment; and customized samples and technical services." This is a landmark achievement for the domestic gallium oxide industry!
"One generation of materials, one generation of technology, one generation of industry," and "GAO Semiconductor leads the way in fourth-generation chip innovation." The GAO Semiconductor team will focus on the conference theme "Cultivating Character, Building Gallium, Creating the Future," taking the promotion of the fourth-generation ultra-wide bandgap gallium oxide semiconductor industry as its mission. Adhering to the industrialization promotion approach of "strategic, urgent, unique, pioneering, and leading," the team will independently break through blockades, dare to innovate and stand at the forefront, and make positive explorations and due contributions to the stable development of the fourth-generation semiconductor industry chain and the enrichment of its ecosystem.
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2025-01-17
GAO Semiconductors Release Parameters For 4-Inch Single-Crystal Substrate For The First Time.
GAO Semiconductors released parameters of a 4-inch (100) plane gallium oxide single crystal substrate for the first time at the "4th Cross-Strait Gallium Oxide and Related Materials and Devices Symposium".
2024-10-15
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