GAO Semiconductors: Leading Four Generations of Technological Innovation

"GaN pioneers the fourth generation of semiconductor innovation." GaN Semiconductor is committed to providing high-quality gallium oxide crystals and epitaxial materials, developing high-end specialized equipment, and pioneering the fourth-generation semiconductor gallium oxide industry.

Company Profile

Beijing GAO Semiconductor Co., Ltd., established in Huairou Science City in 2021, is a high-tech enterprise specializing in the research and development and application of gallium oxide materials and related devices. The company develops and produces high-quality single-crystal substrates and epitaxial wafers, single-crystal and epitaxial equipment, high-sensitivity solar-blind ultraviolet detectors, high-voltage, high-temperature, high-frequency, and high-power power electronic devices, among other high-tech gallium oxide products. The company possesses core technologies in gallium oxide single-crystal substrates, epitaxy, devices, and specialized equipment, demonstrating originality, leadership, and influence in the fourth-generation semiconductor field. It is a pioneering and leading enterprise in China's fourth-generation semiconductor industry and a Zhongguancun High-Tech Enterprise.

The GAO Semiconductor team adheres to the belief of "breaking through blockades, achieving independence and self-reliance, striving forward, persevering, working diligently, and staying at the forefront." It strategically plans and accumulates strength in key areas such as technological breakthroughs, product development, capacity expansion, talent acquisition, and application deployment, accelerating the localization and upgrading of large-size gallium oxide substrates and epitaxy, and making due contributions to the independent control and comprehensive development of my country's fourth-generation semiconductor material industry chain.

Gallium Oxide—A Leader in Fourth-Generation Semiconductor Materials

Gallium oxide (GaO) is a leader in fourth-generation semiconductor materials, boasting a wider bandgap, higher voltage withstand capability, lower power consumption, high temperature resistance, radiation resistance, and low cost. It is a strategically important advanced electronic material for developing key technologies such as power electronics, microwave radio frequency, and solar-blind ultraviolet optoelectronics, and has become a new frontier in international competition.

The latest version of the Wassenaar Arrangement was released in 2021, and in 2022, the United States and Japan successively added GaO to their export control lists. In 2023, my country also implemented export controls on GAO germanium-related items. Achieving independent control over GaO wide-bandgap semiconductor technology is extremely strategic, forward-looking, and urgent!

Academician Hao Yue of the Chinese Academy of Sciences publicly stated that GaO is one of the materials most likely to shine in the future, and GaO devices will become the most competitive power electronic devices in the next 10 years.

In power devices: GaO can simultaneously meet low, medium, high, and ultra-high voltage applications. Gallium oxide will initially appear in consumer electronics and home appliances, where market barriers are low and costs are sensitive, as well as in industrial power supplies where its high reliability and performance can be leveraged. It is expected to fully penetrate the automotive and electrical equipment sectors from 2025 to 2030.

In optoelectronic devices: Gallium oxide can absorb photons in the solar-blind ultraviolet band and generate electrons (photoelectric conversion), making it an ideal material for solar-blind ultraviolet optoelectronic devices. It has important applications in areas such as power grid safety monitoring, medical imaging, maritime search and rescue, and environmental and biochemical detection.

In radio frequency devices: Gallium oxide MOSFET devices are expected to achieve fmax=100GHz with low power consumption, and are expected to find important applications in the 5G and future 6G communication radio frequency device market.

Overview

"A generation of materials, a generation of technology, a generation of industry." GAO semiconductors will leverage the team's technological advantages, rationally plan financing, accelerate technological evolution, iterate and upgrade products, expand product applications, and collaborate on industry layout to comprehensively and rapidly promote the orderly development of the gallium oxide semiconductor industry. GAO semiconductors will be located in Suzhou Industrial Park, backed by the national-level platforms "Suzhou Laboratory" and "National Innovation Center for Third-Generation Semiconductors". By utilizing advanced R&D platforms, the park will accelerate the development of new gallium oxide semiconductor technologies and create a pioneering advantage in the fourth-generation semiconductor gallium oxide industry.